bar 63 ... oct-05-1999 1 silicon pin diodes ? pin diode for high speed switching of rf signals ? low forward resistance ? very low capacitance ? for frequencies up to 3 ghz 1 2 3 vps05161 bar 63 bar 63-06 bar 63-04 bar 63-05 eha07005 1 3 2 eha07006 1 3 2 eha07004 1 3 2 13 eha07002 type marking pin configuration package bar 63 bar 63-04 bar 63-05 bar 63-06 g3s g4s g5s g6s 1 = a 1 = a1 1 = a1 1 = c1 2 n.c. 2 = c2 2 = a2 2 = c2 3 = c 3=c1/a2 3=c1/c2 3=a1/a2 sot-23 sot-23 sot-23 sot-23 maximum ratings parameter value symbol unit diode reverse voltage v r 50 v forward current i f ma 100 250 p tot mw total power dissipation bar 63 , t s 80c bar 63-04, bar 63-05, bar 63-06 , t s 55c 250 p tot operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150 thermal resistance junction-ambient 1) bar 63 r thja 450 k/w junction-ambient 1) bar 63-04,05,06 540 r thja junction-soldering point bar 63 r thjs 280 junction-soldering point bar 63-04,05,06 r thjs 380 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 63 ... oct-05-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values max. typ. min. dc characteristics v breakdown voltage i (br) = 5 a v (br) - - 50 na reverse current v r = 20 v - 50 - i r v forward voltage i f = 100 ma v f - 0.95 1.2 ac characteristics diode capacitance v r = 0 v, f = 100 mhz v r = 5 v, f = 1 mhz c t - 0.3 pf 0.3 0.21 - - - - r f 2 - ? 1.2 1 forward resistance i f = 5 ma, f = 100 mhz i f = 10 ma, f = 100 mhz - 75 - rr charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma ns - 1.8 series inductance l s - nh
bar 63 ... oct-05-1999 3 forward current i f = f ( t a ; t s ) bar 63 a t s t ?c ma a t ; 150 100 50 0 0 f s ehd07142 t 20 40 60 80 100 120 150 forward current i f = f ( t a ; t s ) bar 63-04, -05, -06 a t s t ? c ma a t ; 150 100 50 0 0 f s ehd07143 t 20 40 60 80 100 120 150
bar 63 ... oct-05-1999 4 permissible pulse load r thjs = f ( t p ) bar 63-04, -05, -06 t ehb07146 p 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0 5 t t p d = t p t 10 0 1 10 2 10 d= 0.5 0.2 0.1 0.05 0.05 0.01 0.005 0 r thjs 5 5 k/w permissible pulse load r thjs = f ( t p ) bar 63 t ehb07144 p 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0 5 t t p d = t p t 10 0 1 10 2 10 d= 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 r thjs 5 5 k/w permissible pulse load i fmax / i fdc = f ( t p ) bar 63-04, -05, -06 t ehb07147 p f 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0 t t p d = t p t 10 0 d= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 max dc f 1 10 5 5 10 2 permissible pulse load i fmax / i fdc = f ( t p ) bar 63 t ehb07145 p f 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0 t t p d = t p t d= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 max dc f 2 10 5 5 10 1 0 10
bar 63 ... oct-05-1999 5 diode capacitance c t = f ( v r ) f = 1mhz v ehd07139 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20 30 forward resistance r f = f ( i f ) f = 100mhz ehd07138 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 2 10 0 10 1 forward current i f = f ( v f ) t a = parameter ma 0.3 f f ehd07171 v bar 63... 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.5 0.8 1 v 1.2 40 25 ? c 85 ? c ? c
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